2008 .9. 11 1/2 semiconductor technical data SMFB14 schottky barrier type diode revision no : 3 switching type power supply applications. features h repetitive peak reverse voltage : v rrm =40v. h averge output rectitifed current : i o =1.0a. h feak forward voltage : v fm =0.50v(max.) h for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application h switching power supply. h reversed battery connection protection. h dc/dc converter. h cellular phones. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =1.0a - - 0.50 v repetitive peak reverse current i rrm v rrm =rated - - 1.0 ma thermal resistance r th(j-1) junction to lead - - 20 ? /w r th(j-a) junction to ambient (on a grass-epoxy board) - - 140 characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 40 v average output rectitifed current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 22 a junction temperature t j -40 q 125 ? storage temperature range t stg -40 q 125 ?
2008. 9. 11 2/2 SMFB14 revision no : 3
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